Beilstein J. Nanotechnol.2021,12, 1–23, doi:10.3762/bjnano.12.1
of Physics, University of Jyväskylä, P.O. Box 35, FI-40014 Jyväskylä, Finland 10.3762/bjnano.12.1 Abstract Scanning helium-ion microscopy (HIM) is an imaging technique with sub-nanometreresolution and is a powerful tool to resolve some of the tiniest structures in biology. In many aspects, the HIM
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Figure 1:
Annual (bars) and accumulated (blue line) numbers of publications on bio-imaging using the helium-i...
Beilstein J. Nanotechnol.2018,9, 1926–1939, doi:10.3762/bjnano.9.184
Grenoble, France 10.3762/bjnano.9.184 Abstract In this paper, we present an enhanced differential Hall effect measurement method (DHE) for ultrathin Si and SiGe layers for the investigation of dopant activation in the surface region with sub-nanometreresolution. In the case of SiGe, which constitutes the
SiGeOI and 11 nm thick SOI. In both cases, DHE is shown to be a uniquely sensitive characterisation technique for a detailed investigation of dopant activation in ultrashallow layers, providing sub-nanometreresolution for both dopant concentration and carrier mobility depth profiles.
Keywords: carrier
mobility; contact resistance; differential Hall effect; dopant activation; fully depleted silicon on insulator (FDSOI); laser annealing; sub-nanometreresolution; Introduction
The research efforts made throughout the last decades have made it possible to keep the momentum for a continuous miniaturization
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Figure 1:
Removed SiGe thickness measured by different methods (TEM, XRD and ellipsometry) as a function of t...